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Information × Registration Number 2116U001766, Article popup.category Thesis Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/45971 popup.publisher Sumy State University Description We investigated the possibility of using of AlGaInP heterostructures with p-n junction as diode temperature sensors having quasi-linear dependence of the forward voltage drop on the ambient temperature at the fixed direct current. Thus we measured the current-voltage characteristics of the p-n structures in the temperature range 293-550 K. Using the data obtained we calculated the differential current thermal sensitivity of the structures mentioned. A semilogarithmic plot of the thermal sensitivity vs. forward current dependence is presented in the figure. popup.nrat_date 2025-05-12 Close