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Information × Registration Number 2116U002662, Article popup.category Thesis Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/46808 popup.publisher Sumy State University Description On the basis of thin films the following elements of integrated circuits (IC) are made in microelectronics: film resistors; electrodes (electrode film capacitors, spiral inductors busducts, installation guides, closures MIS - transistors) contact paths and platforms; auxiliary elements. Electrical connection of metals and semiconductors with metallic conductors is performed using layered condensation and formation of ohmic contacts not rectifier, the quality of which is largely dependent on parameters and characteristics of microelectronic devices, their reliability and durability. The metal / semiconductor (Me/Sem) can be rectifying (if potential barrier between the metal and semiconductor tunnel-opaque) or ohmic (potential barrier if it is missing or tunnel-transparent to electrons). Formation of single- and two-layer films based on metals popup.nrat_date 2025-05-12 Close