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Information × Registration Number 2117U000767, Article popup.category Стаття Title popup.author popup.publication 01-01-2017 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/65992 popup.publisher Sumy State University Description Prior to the fabrication of Integrated circuits, the electrical parameters are analytically modeled & simulated using any computer aided design tool. The ever increasing demand of the features of the electronic appliances has forced to put more and more transistors in a small IC chip. The main target of the integrated circuit design and fabrication is to achieve more functionality at higher speed using less power, less area and low cost. Various parameters like threshold voltage, sub-threshold leakage current and subthreshold slope etc. are analytically derived and simulated to get match with each other. In this paper, 45 nm n-channel metal-oxide- semiconductor field effect transistor (NMOS) has been designed in SILVACO tool to give low off state leakage current by increasing the work function of gate. popup.nrat_date 2025-03-24 Close