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Information × Registration Number 2117U001178, Article popup.category Стаття Title popup.author popup.publication 01-01-2017 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/65924 popup.publisher Sumy State University Description In this article, two factors that limit the performance of HIT solar cells (Heterojunction with Intrinsic Thin layer) based on amorphous silicon / crystalline silicon are studied. First, we study the influence of the valence band tail width (characteristic energy ED) and the conduction band tail width (characteristic energy EA) of hydrogenated amorphous silicon [1]. Then we analyze the effect of electrons mobility μn and holes mobility μp in the emitter of the structure ITO/p-a-Si:H /i-pmSi:H /n-c-Si/Al. Our results show that a decrease of ED in the p-a-Si: H layer decreases the donors density of states in the gap, as well as holes recombination in this layer. However, no amelioration is observed when EA decreases. Furthermore, we show that increasing the mobility of charge carriers μn and μp, enhance the performance of the studied solar cells. popup.nrat_date 2025-03-24 Close