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Information × Registration Number 2117U001557, Article popup.category Стаття Title popup.author popup.publication 01-01-2017 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/65780 popup.publisher Sumy State University Description In this paper, we discuss how a short channel effects can be suppressed and how a threshold voltage fluctuation can be minimized and better control of subthreshold slope by the impact of the back gate bias and control of gate work function of a fully depleted SOI (Silicon-On-Insulator) MOSFET. The fluctuation in the threshold voltage and subthreshold slope are due to short channel effects. The Back gate voltage plays a significant role on the threshold voltage and thin buried oxide is used to suppress the short-channel effects and is used to keep a low value of the subthreshold slope are described in this paper. It is shown that how short channel effects can be suppressed in order to improve subthreshold slope. popup.nrat_date 2025-03-24 Close