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Candidate dissertation
Position-sensitive photodetectors based on Si and epitaxial structures of GaAs (receiving, properties, application)
1
Danilets Eugane Valentinovech. Position-sensitive photodetectors based on Si and epitaxial structures of GaAs (receiving, properties, application) : к.т.н. : spec.. 05.27.06 - Технологія, обладнання та виробництво електронної техніки : presented. 2003-06-20; popup.evolution: .; Kherson state technical university. – , 0403U002500.
Candidate dissertation
Liquid phase epitaxy of the A4B6 solid solutions for the Schottky barrier diodes
1
Tkachuk Andrij Ivanovych. Liquid phase epitaxy of the A4B6 solid solutions for the Schottky barrier diodes : к.т.н. : spec.. 05.27.06 - Технологія, обладнання та виробництво електронної техніки : presented. 2003-03-21; popup.evolution: .; Kherson state technical university. – , 0403U001292.
2 documents found

Updated: 2026-11-07


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