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R & D report
Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod
Head: Kladko Vasyl Petrovych. Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod. (popup.stage: ). V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine. № 0216U007050
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Updated: 2026-11-04


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