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Information × Registration Number 0100U004014, R & D request Title The investigation of the electrophysical parameters and structural perfection of the Si monocristals growed by crucible-free zonal melting by means of equipment intended for model-testing under laboratory conditions. Head Баранський Петро Іванович, Registration Date 08-09-2000 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-11 Close
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The investigation of the electrophysical parameters and structural perfection of the Si monocristals growed by crucible-free zonal melting by means of equipment intended for model-testing under laboratory conditions.
Head: Баранський Петро Іванович. The investigation of the electrophysical parameters and structural perfection of the Si monocristals growed by crucible-free zonal melting by means of equipment intended for model-testing under laboratory conditions.. V. Lashkaryov Institute of semiconductor physics. № 0100U004014
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Updated: 2026-03-22


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