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Information × Registration Number 0101U006116, R & D request Title Radical-beam gettering epitaxy - a novel technique in the technology of semiconductor device structures based on multicomponent A3B5 compounds. Head Сукач Георгій Олексійович, Registration Date 13-08-2001 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-11 Close
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Radical-beam gettering epitaxy - a novel technique in the technology of semiconductor device structures based on multicomponent A3B5 compounds.
Head: Сукач Георгій Олексійович. Radical-beam gettering epitaxy - a novel technique in the technology of semiconductor device structures based on multicomponent A3B5 compounds.. V. Lashkaryov Institute of semiconductor physics. № 0101U006116
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Updated: 2026-03-22


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