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Information × Registration Number 0106U013107, ( 0208U005654  ) R & D request Title Development of Binary and Ternary Metal Oxides Gate dielectric System with Less than 1.0 nm Equivalent Oxide Thickness for MOS Technology and Methods of Analysis of the Electrical Characteristics Head Смертенко Петро Семенович, Registration Date 26-12-2006 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of Binary and Ternary Metal Oxides Gate dielectric System with Less than 1.0 nm Equivalent Oxide Thickness for MOS Technology and Methods of Analysis of the Electrical Characteristics
Head: Смертенко Петро Семенович. Development of Binary and Ternary Metal Oxides Gate dielectric System with Less than 1.0 nm Equivalent Oxide Thickness for MOS Technology and Methods of Analysis of the Electrical Characteristics. V. Lashkaryov Institute of semiconductor physics. № 0106U013107
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Updated: 2026-03-26


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