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Information × Registration Number 0107U007214, ( 0208U010193  ) R & D request Title Investigation and elaboration of technology for high-efficient diodes for millimeter and sub-millimeter range based on wide bandgap n -n-n and n -i-n epitaxial heterostructures. Head Belyaev Alexander Євгенович, Доктор фізико-математичних наук Registration Date 26-07-2007 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Investigation and elaboration of technology for high-efficient diodes for millimeter and sub-millimeter range based on wide bandgap n -n-n and n -i-n epitaxial heterostructures.
Head: Belyaev Alexander Євгенович. Investigation and elaboration of technology for high-efficient diodes for millimeter and sub-millimeter range based on wide bandgap n -n-n and n -i-n epitaxial heterostructures.. V. Lashkaryov Institute of semiconductor physics. № 0107U007214
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Updated: 2026-03-24


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