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Information × Registration Number 0108U004820, ( 0213U005116  ) R & D request Title Development of basically new materials, including nano-materials, components for microelectronic devices, which implies work-out of the technology for the obtaining of new semiconductor materials based on quantum points of chalcogenides for creation of emit-ters of visible and near-UV light (500-1400 nm) with controlled emission spectrum. Pro-duction of experimental samples of light diodes; development of the technology for obtaining nano-ceramics on the base of heavy oxides of rare-earth metals for ionizing radiation registration. Development of the technological regulations for nano-ceramics preparation. Production of experimental series of scintillation elements for X-ray and gamma-quanta registration; development of the technology for making high-quality sapphire substrates for "silicon-on-sapphire" structures, light diodes and other compo-nents of microelectronic devices. Creation of pilot production area and manufacture of substrates from the crystals grown by different methods meant for la Head Толмачов Олександр Володимирович, Registration Date 20-05-2008 Organization Institute for single crystals NASU popup.description1 popup.nrat_date 2024-12-10 Close
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Development of basically new materials, including nano-materials, components for microelectronic devices, which implies work-out of the technology for the obtaining of new semiconductor materials based on quantum points of chalcogenides for creation of emit-ters of visible and near-UV light (500-1400 nm) with controlled emission spectrum. Pro-duction of experimental samples of light diodes; development of the technology for obtaining nano-ceramics on the base of heavy oxides of rare-earth metals for ionizing radiation registration. Development of the technological regulations for nano-ceramics preparation. Production of experimental series of scintillation elements for X-ray and gamma-quanta registration; development of the technology for making high-quality sapphire substrates for "silicon-on-sapphire" structures, light diodes and other compo-nents of microelectronic devices. Creation of pilot production area and manufacture of substrates from the crystals grown by different methods meant for la
Head: Толмачов Олександр Володимирович. Development of basically new materials, including nano-materials, components for microelectronic devices, which implies work-out of the technology for the obtaining of new semiconductor materials based on quantum points of chalcogenides for creation of emit-ters of visible and near-UV light (500-1400 nm) with controlled emission spectrum. Pro-duction of experimental samples of light diodes; development of the technology for obtaining nano-ceramics on the base of heavy oxides of rare-earth metals for ionizing radiation registration. Development of the technological regulations for nano-ceramics preparation. Production of experimental series of scintillation elements for X-ray and gamma-quanta registration; development of the technology for making high-quality sapphire substrates for "silicon-on-sapphire" structures, light diodes and other compo-nents of microelectronic devices. Creation of pilot production area and manufacture of substrates from the crystals grown by different methods meant for la. Institute for single crystals NASU. № 0108U004820
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Updated: 2026-03-24


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