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Information × Registration Number 0108U009662, ( 0210U004180  ) R & D request Title Improvement of technologic section pyrolytic process. Improvement of the equipment "Isotron 2M" in order to the deposition of SiGe and Si epitaxial layers by means LP CVD ( low pressure chemical vapor deposition) methods Head Сидоренко Володимир Павлович, Registration Date 29-10-2008 Organization State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine popup.description1 popup.nrat_date 2024-12-10 Close
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Improvement of technologic section pyrolytic process. Improvement of the equipment "Isotron 2M" in order to the deposition of SiGe and Si epitaxial layers by means LP CVD ( low pressure chemical vapor deposition) methods
Head: Сидоренко Володимир Павлович. Improvement of technologic section pyrolytic process. Improvement of the equipment "Isotron 2M" in order to the deposition of SiGe and Si epitaxial layers by means LP CVD ( low pressure chemical vapor deposition) methods. State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine. № 0108U009662
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Updated: 2026-03-22


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