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Information × Registration Number 0110U003972, ( 0211U004837  ) R & D request Title Development of the technology for deposition of nanocrystalline silicon carbide films for the production of high-stability temperature sensors on their base, stage 1. Investigation and optimization of technological processes of the formation of 2-5 mcm thick nanostructured high-resistance silicon carbide layers on silicon substrate Head Лопін Олександр Володимирович, Registration Date 27-12-2010 Organization Institute for single crystals NASU popup.description1 popup.nrat_date 2024-12-10 Close
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Development of the technology for deposition of nanocrystalline silicon carbide films for the production of high-stability temperature sensors on their base, stage 1. Investigation and optimization of technological processes of the formation of 2-5 mcm thick nanostructured high-resistance silicon carbide layers on silicon substrate
Head: Лопін Олександр Володимирович. Development of the technology for deposition of nanocrystalline silicon carbide films for the production of high-stability temperature sensors on their base, stage 1. Investigation and optimization of technological processes of the formation of 2-5 mcm thick nanostructured high-resistance silicon carbide layers on silicon substrate. Institute for single crystals NASU. № 0110U003972
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Updated: 2026-03-24


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