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Information × Registration Number 0110U003974, ( 0211U004838  ) R & D request Title Development of the technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices, stage 1. Optimization of the technology of the formation of nanostructured high-resistance protective silicon carbide coatings with a thickness of 1-3 mcm on silicon surface, and comprehensive investigations of the physico-chemical characteristics of the heterostructures "nanostructured silicon carbide - high-resistance silicon" (500-1000 Ohm cm) Head Пузіков Вячеслав Михайлович, Registration Date 27-12-2010 Organization Institute for single crystals NASU popup.description1 popup.nrat_date 2024-12-10 Close
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Development of the technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices, stage 1. Optimization of the technology of the formation of nanostructured high-resistance protective silicon carbide coatings with a thickness of 1-3 mcm on silicon surface, and comprehensive investigations of the physico-chemical characteristics of the heterostructures "nanostructured silicon carbide - high-resistance silicon" (500-1000 Ohm cm)
Head: Пузіков Вячеслав Михайлович. Development of the technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices, stage 1. Optimization of the technology of the formation of nanostructured high-resistance protective silicon carbide coatings with a thickness of 1-3 mcm on silicon surface, and comprehensive investigations of the physico-chemical characteristics of the heterostructures "nanostructured silicon carbide - high-resistance silicon" (500-1000 Ohm cm). Institute for single crystals NASU. № 0110U003974
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Updated: 2026-03-25


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