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Information × Registration Number 0110U004253, R & D request Title Development of physical principles of technology of receipt of heterostructures on the basis of gallium-arsenide materials by the method of MOS hydride epitaxy for the receipt of high-efficiency photovoltaic elements Head Круковський Семен Іванович, Registration Date 31-05-2011 Organization popup.description1 popup.nrat_date 2024-12-10 Close
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Development of physical principles of technology of receipt of heterostructures on the basis of gallium-arsenide materials by the method of MOS hydride epitaxy for the receipt of high-efficiency photovoltaic elements
Head: Круковський Семен Іванович. Development of physical principles of technology of receipt of heterostructures on the basis of gallium-arsenide materials by the method of MOS hydride epitaxy for the receipt of high-efficiency photovoltaic elements. . № 0110U004253
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Updated: 2026-03-22


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