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Information × Registration Number 0110U006276, ( 0211U001065  ) R & D request Title Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers Head Конакова Раїса Василівна, Registration Date 13-10-2010 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers
Head: Конакова Раїса Василівна. Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers. V. Lashkaryov Institute of semiconductor physics. № 0110U006276
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Updated: 2026-03-22


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