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Information × Registration Number 0110U006408, ( 0211U004962  0212U001527  ) R & D request Title Study of the process obtanning silicon high purity by plasma chemical recovering cleaned silane in low-temperature plasma of atomic hydrogen. Head Широков Борис Михайлович, Registration Date 09-02-2012 Organization National Science Center "Kharkiv Institute of Physics and Technology" popup.description1 popup.nrat_date 2024-12-10 Close
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Study of the process obtanning silicon high purity by plasma chemical recovering cleaned silane in low-temperature plasma of atomic hydrogen.
Head: Широков Борис Михайлович. Study of the process obtanning silicon high purity by plasma chemical recovering cleaned silane in low-temperature plasma of atomic hydrogen.. National Science Center "Kharkiv Institute of Physics and Technology". № 0110U006408
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Updated: 2026-03-22


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