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Information × Registration Number 0113U007068, R & D request Title The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 80 Lm/Wt Head Круковський Семен Іванович, Registration Date 24-09-2013 Organization The closed Joint-stock Company "Research-and-production concern "Science" popup.description1 popup.nrat_date 2024-12-10 Close
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The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 80 Lm/Wt
Head: Круковський Семен Іванович. The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 80 Lm/Wt. The closed Joint-stock Company "Research-and-production concern "Science". № 0113U007068
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Updated: 2026-03-26


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