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Information × Registration Number 0114U001970, ( 0215U003443  ) R & D request Title Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy Head Belyaev Alexander Євгенович, Доктор фізико-математичних наук Registration Date 03-06-2014 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy
Head: Belyaev Alexander Євгенович. Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy. V. Lashkaryov Institute of semiconductor physics. № 0114U001970
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Updated: 2026-03-28


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