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Information × Registration Number 0116U005667, ( 0216U010324  ) R & D request Title Thejretical and experimental research of current flow mechanisms in n+ and n+-n-Si ohmic contacts with high electron depletion in contact region Head Конакова Раїса Василівна, Registration Date 16-11-2016 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Thejretical and experimental research of current flow mechanisms in n+ and n+-n-Si ohmic contacts with high electron depletion in contact region
Head: Конакова Раїса Василівна. Thejretical and experimental research of current flow mechanisms in n+ and n+-n-Si ohmic contacts with high electron depletion in contact region. V. Lashkaryov Institute of semiconductor physics. № 0116U005667
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Updated: 2026-03-21


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