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Information × Registration Number 0119U003076, ( 0220U000511  ) R & D request Title Development of electrical measurement technique parameters and test transistors FinFET with resistive shutter (hereinafter referred to as OBs) to determine characteristics and heating in the process their operation current-voltage Head Nazarov Oleksii Mykolaiovych Oleksii Mykolaiovych, Доктор фізико-математичних наук Registration Date 05-11-2019 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of electrical measurement technique parameters and test transistors FinFET with resistive shutter (hereinafter referred to as OBs) to determine characteristics and heating in the process their operation current-voltage
Head: Nazarov Oleksii Mykolaiovych Oleksii Mykolaiovych. Development of electrical measurement technique parameters and test transistors FinFET with resistive shutter (hereinafter referred to as OBs) to determine characteristics and heating in the process their operation current-voltage. V. Lashkaryov Institute of semiconductor physics. № 0119U003076
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Updated: 2026-03-29


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