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Information × Registration Number 0119U100730, ( 0222U001179  ) R & D request Title High-quality surface-barrier structures based on metal nitrides thin films for electronics and photovoltaics Head Maistruk Eduard V., Доктор фізико-математичних наук Registration Date 17-02-2019 Organization Yuriy Fedkovych Chernivtsi National University popup.description1 The purpose of the project is to obtain high-quality surface-barrier structures by depositing thin films of metal nitrides (ТіN, MoN, CrN, AlN, Zn3N2, W2N, Fe4N, Sn3N4) on semiconductor crystals and thin films with flat and nanostructured surface with predetermined and reproducible electrical and photovoltaic properties; the establishment of regularities flowing of physical processes in the created photosensitive structures depending on the structural features and technological processes, as well as developing new and improving existing ones methods of analysis of electric and photoelectric properties of surface-barrier structures, improvement of their parameters popup.nrat_date 2024-12-10 Close