Registration Number
0119U100730,
(
0222U001179
)
R & D request
Title
High-quality surface-barrier structures based on metal nitrides thin films for electronics and photovoltaics
Head
Maistruk Eduard V., Доктор фізико-математичних наук
Registration Date
17-02-2019
Organization
Yuriy Fedkovych Chernivtsi National University
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The purpose of the project is to obtain high-quality surface-barrier structures by depositing thin films of metal nitrides (ТіN, MoN, CrN, AlN, Zn3N2, W2N, Fe4N, Sn3N4) on semiconductor crystals and thin films with flat and nanostructured surface with predetermined and reproducible electrical and photovoltaic properties; the establishment of regularities flowing of physical processes in the created photosensitive structures depending on the structural features and technological processes, as well as developing new and improving existing ones methods of analysis of electric and photoelectric properties of surface-barrier structures, improvement of their parameters
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2024-12-10
