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Information × Registration Number 0222U001179, 0119U100730 , R & D reports Title High-quality surface-barrier structures based on metal nitrides thin films for electronics and photovoltaics popup.stage_title Head Maistruk Eduard V., Доктор фізико-математичних наук Registration Date 24-01-2022 Organization Yuriy Fedkovych Chernivtsi National University popup.description2  MoN/n-Si semiconductor heterojunctions were fabricated by sputtering thin films of molybdenum nitride using the reactive magnetron sputtering. From the study of their I-V-characteristics and C-V-characteristics it was established that growing nanowires leads to some deterioration in the electrical properties and band parameters of MoN/n-Si heterojunctions; however, further etching in HF positively affects the electrical properties and band parameters of heterostructures. The mechanism of current flow through heterojunctions does not depend on etching in HF, for small forward biases - generation-recombination, for large forward biases - tunnel-recombination, for reverse biases - tunneling through the space charge region. The series resistance for heterostructures with grown nanowires and etched in HF significantly affects their capacitance-voltage characteristics. The main photoelectric parameters of MoN/n-Si heterostructures with grown nanowires and etched in HF were determined, namely, the open circuit voltage Voc = 0.13 V, the short circuit current Isc = 0.54 mA/cm2 at a light intensity of 80 mW/cm2. Product Description popup.authors Ilashchuk Maria I Andrushchak Halyna Olegivna Koziarskyi Dmytro P Maistruk Eduard Vasyloivych Mostovyi Andrii I Orletskyi Ivan H Solovan Mykhailo M Ul'yanyts'kyj Kostyantyn S popup.nrat_date 2022-03-09 Close