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Information × Registration Number 0120U102292, ( 0221U100360  ) R & D request Title Development of processes for the formation of periodic ordered plasmon nanostructures by the method of interference photolithography based on chalcogenide semiconductors, the production of experimental samples and the study of their characteristics. Head Indutnyi Ivan Z., Доктор фізико-математичних наук Registration Date 29-04-2020 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 The purpose of the project is to establish the laws of formation and manufacture of experimental samples of ordered arrays of plasmon nanostructures of various types formed by interference photolithography, as well as the study of their morphological, optical properties and plasmon-stimulated processes in thin semiconductor and dielectric layers and nanocomposites popup.nrat_date 2024-12-10 Close