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Information × Registration Number 0124U003756, ( 0224U032996  0225U004320  0225U004320  ) R & D request Title Deformation engineering of the electronic structure of GeSn thin films for new generation IR optoelectronics Head Yukhymchuk Volodymyr O., д.ф.-м.н. Registration Date 02-09-2024 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 Development of physico-technological principles of strain engineering of thin GeSn films for optoelectronics in the near and mid-IR range, namely, creation of working physical models of changes in the fundamental properties of Ge films due to the simultaneous incorporation of Sn and C or B atoms into their lattice in the process of magnetron sputtering of the corresponding targets and by ion implantation of Sn and C (B) ions in Ge and GeSn films and post-growth thermal treatments. popup.nrat_date 2024-12-09 Close