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Information × Registration Number 0200U001281, 0195U024515 , R & D reports Title Investigation of control of recombination processes and phenomena of carrier transport in semiconductors (A2B6, A3B5, Si) with the goal to optimize of semiconductor device paramters (light emitting, photoelements, solar elements, tensosensors) popup.stage_title Head Shejnkman Mojsej Kyvovych, Registration Date 02-02-2000 Organization Institute of Semiconductor Physics popup.description2 The work is devoted to establishment of mechanisms of different external factors influence, including technological, on recombination processes and carrier transport phenomena in semiconductors A2B6, A3B5 and Si; development of new technological methods of material and device parameters modification. To use different investigation methods it was shown that decoration of dislocations by point defects in CdS crystals leads to extension of fundamental band edge in long wavelength region due to state density tail formation in near dislocation regions, as well as transforamtion of the shape of edge luminescnece strectrum and degradation of electron pumped lasers. Analisys of redistribution of charge point defects in semiconductors located in electric field as we as posibility of dismission of moving donor defects from crystal volume under electric field were presented. It was shown that quasielectric fields which are due to impurity concentration gradient lead to increase of effectiveness and stability of p hototransformers based on A2B6 surface-barier structures with thin varizone layers. It was established that surface substances (oxides and oxyhidrides) on silicon crystallites take part in excitation light absorption process; the creation of nonradiative recombination centers (silicon oxide surface centers) is the main reason of decrease of luminescence intensity under thermal tratements only. Based on theoretical studies the posibility of effective work of number of new type silicon-based tensosensitive microelectromechanical transformers. New technology of formation of pressure sensors based on tehsoe.m.f. and microphone was developed. Obtained results can be used to improve of semiconductor technology and various optoelecronic device creation. Product Description popup.authors popup.nrat_date 2020-04-03 Close