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Information × Registration Number 0200U001285, 0195U010994 , R & D reports Title Study of the physical processes on the interfaces (and in the bulk) of thinfilm semiconductor and superconductor systems with outside and inside insulator layers popup.stage_title Head Lysenko Volodymyr Sergijovych, Registration Date 04-10-2000 Organization Institute of Semiconductor Physics popup.description2 Silicon-on-insulator systems, thin film of high-temperature superconductors have been investigated for the purpose of studying the processes of charge transport and trapping in such systems under influence of high electric field, ionizing radiation and electrical injection by electrical measurements in the temperature range from 4 to 700 K. It was found that SOI systems, created by zone laser recrystallization method, have the main electrical characteristics close to those in bulk Si; exhibit high radiation and bias-temperature stability. The model of high-temperature SOI MOSFET operation was developed. Effect of electrical field on the charge transport processes in high-temperature superconductor films was studied. Product Description popup.authors popup.nrat_date 2020-04-03 Close
R & D report
Study of the physical processes on the interfaces (and in the bulk) of thinfilm semiconductor and superconductor systems with outside and inside insulator layers
Head: Lysenko Volodymyr Sergijovych. Study of the physical processes on the interfaces (and in the bulk) of thinfilm semiconductor and superconductor systems with outside and inside insulator layers. (popup.stage: ). Institute of Semiconductor Physics. № 0200U001285
1 documents found

Updated: 2026-03-22


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