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Information × Registration Number 0200U001414, 0195U010992 , R & D reports Title Development of physico-chemical foundations for production and functional diagnostics of crystals and structures (devices) based on semiconductor compounds and narrow-gap solid solutions and intended for infrared radiation detection and conversion popup.stage_title Head O.V.Lyubchenko, Registration Date 16-02-2000 Organization Institute of Semiconductor Physics popup.description2 Objects of investigation were as follows: narrow-gap Cd?Hg1-?Te (x >0.3) solid solutions and epitaxial photosensitive p-InAs/n-lnAs structures. The objectives of the work were search, scientific foundations of phy- sico-chemical and technological techniques for fabrication and optimization of structural and functional para- meters of IR photosensitive semiconductor materials and p-n structures. The technological procedures used were planar and mesa-chemical etching; chemico-dynamical element formation; thermal, laser and thermoacoustic treatments. The fundamental studies of Cd?Hg1-?Te (x > 0.3) structural-sensitive properties made it possible: to reveal some new ways to reach stable activation of photo conduction; to determine mechanisms and propose physical criteria for photoconduction parameters limitation by point and extended lattice defects (dislocations, clusters, interphase and small-angle boundaries, etc.); to determine the nature of defect structure transformation induced by external physical actions (thermal, laser, acoustic). We have (i) studied experimentally the character of physico-chemical interaction between InSb, InAs and various multicomponent active media (etchants), as well as some metals, over a wide temperature range; (ii) determined mechanism and character of the above semiconductor materials dissolution in different mineral acid solutions; (iii) optimized etchant compositions for different stages of semiconductor materials treatments; (iv) formed reliable ohmic contacts to InAs and InSb. Some technological procedures and corresponding unique equipment for defectless chemico-dynamical treatment of II-VI (CdTe, CdHgTe) and III-V (InAs, InSb) crystal surfaces have been developed; photosensitive elements for IR (3 - 5 ?m) spectral region have been fabricated whose parameters meet the present-day standards. Product Description popup.authors popup.nrat_date 2020-04-03 Close