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Information × Registration Number 0200U001767, 0100U000905 , R & D reports Title Processes of relaxation of exited states, electrophysical characteristics and gamma-sensitivity of semiconductor detectors based on compounds CdTe-ZnTe. popup.stage_title Head Gal'chynets'kyj L.P., Registration Date 28-03-2000 Organization Scientific and Technological Center for RadiationInstruments Concern "Institute for Single Crystals" National Academy of Sciences UKRAINE popup.description2 In the course of work, possibility was studied of preparation of high-quality CZT crystals with low degree of purity. Growth of CZT crystals using technological means - special graphite material with low thermal expansion coefficient for growth crucible, charge synthesis in sealed quartz ampoules, growth on seed - allows to obtain structurally perfect crystals free from defects, with high values of and for CZT detectors operating in calculation and spectrometric modes. Product Description popup.authors popup.nrat_date 2020-04-03 Close