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Information × Registration Number 0200U003139, 0198U002349 , R & D reports Title Development of semiconductor physical sensors based on silicon-on-insulator structures and silicon and germanium microcrystals popup.stage_title Head Druzhynin A.O., Registration Date 17-03-2000 Organization Lviv Polytechnic State University popup.description2 Investigation of strain, temperature, magnetic field and radiation (laser and electronic) influence on the properties of poly-Si layers-on-insulator and Si and Ge microcrystals (MC) was carried out to develop physical sensors. High-sensitive sensors to measure high strains, high-temperature pressure sensors, pressure sensors with high thermostability, sensors for medical diagnostics were created. The possibility of creation sensors on the basis of Si and Ge MC for operating at cryogenic temperatures and high magnetic fields and thermal snsors based on Seebeck effect was shown. Product Description popup.authors popup.nrat_date 2020-04-03 Close