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Information × Registration Number 0200U003474, 0197U016514 , R & D reports Title Investigation of physical mechanism of formation profiles assigning atoms of kickback and radiation defects when charged high-energy particles interacting with layered structures based on semiconductors popup.stage_title Head Pelikhatyj M., Registration Date 15-05-2000 Organization Kharkov National University named after V.N. Karazin popup.description2 Object of investigation - layeredl structures that are based on silicon, germanium and metal pellicles, and microelectronic structures, which have their basis. Aim of investigation - finding out what influence gamma-rays, neutrons have to the assigning of the admixture and to the defect formation. It has been build the theoretical model of particles characteristics, which are leaving metal pellicle and implanting to the semiconductor material. Experimentally it's shown, that the possibility of forming sharp profiles of admixture on the significant depths when radiation-stimulating processes are used. It's shown the possibility of assigning admixture analysis on the significant depths of semiconductor with the help of the method the opposite dispersion. With the help of optical microscopy of defects representation on the light and the dark fields, and in case of lightning it up under the angles 30-450, it is shown, that the defects are situated not on the surface of germanium pellicles, but in their part by volume. The form of the defects, which was determined with the help of optical microscopy, is depending on chemical composition of the pellicles, and their size - on the thickness of germanium pellicles. The investigation with the help of rastr electronic microscopy allowed exposing thin structure of the defects, which appeared by means of explosive crystallization of germanium pellicles. Product Description popup.authors popup.nrat_date 2020-04-03 Close