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Information × Registration Number 0200U004480, 0100U003599 , R & D reports Title DEVELOPMENT OF THE SCIENTIFIC BASES AND RESEARCHES OF SUPERPRODUCTIVE TECHNIQUE OF DIVISION of SEMICONDUCTOR WAFERS FOR SEPARATE UNITS popup.stage_title Head Kovalenko V.S., Registration Date 19-07-2000 Organization National Technscal University of Ukraine "Kiev Polytechnic Institute". popup.description2 In operation the original technique of definition of temperature dependence's of an optical behavior of materials grounded on application methods of nonlinear programming designed, and as the function of the purpose have utilized min of a functional of discrepancies between calculated and measured by the receiver, powers of a bundle of a laser radiation, past tested the sample in an appropriate instant with simultaneous fixing of power of a bundle of radiation of the reached(achieved) work piece and reflected from it(her). And, as a coupling equation have utilized nonlinear, non-stationary, in view of phase changes, one-dimensional heat conduction equation solved by a sweep method. With the help of a designed technique in operation the dependence of reflection factors both absorption mono and polysilicon from temperature (wavelength of radiation -1.06mkm) are defined. Besides it is found, that at high densities of energy of the focused laser radiation, there is an alignment of an optical behavior poly and single crystals on outcome of heat. Using methods of a design of experiments the models of a cutting process of a poly crystal (width 0.3-0.5мм) with scanning focused laser beam had been obtained. Found with methods of nonlinear programming, the optimum regimes of processing allow to realize cutting of mono and poly crystals and single crystals silicon with speed 25mm/s at minimum surface roughness. Product Description popup.authors popup.nrat_date 2020-04-03 Close