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Information × Registration Number 0200U004608, 0197U015776 , R & D reports Title Contact phenomena in structures on the basis of A3B5 semiconductors composite connections popup.stage_title Head Arkusha Yu.V., Registration Date 26-09-2000 Organization Kharkov National University named after V.N.Karazin popup.description2 The Gunn diodes of mm- range with different length of an active area. Two-temperature model of the semiconductor was used for mathematical simulation of physical processes in diodes. Main physical processes that influential on diodes output characteristics have been studied. There were obtained diodes power and frequency characteristics. It was found the modulation of conductivity of a diode active area increases of the oscillation efficiency and optimal frequency. Product Description popup.authors popup.nrat_date 2020-04-03 Close