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Information × Registration Number 0201U001587, 0197U016405 , R & D reports Title Electrical properties of disordered semiconductors and using radiation effects at producing of semiconductor detectors of nuclear radiation. popup.stage_title Head Lytovchenko P. G., Registration Date 12-02-2001 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 Electrophysical properties of binary semiconductors A3B5 and highresistivity silicon disordered by nuclear irradiation were investigated. Dosimetric possibilities of MOSFET-sensors shown in wide range of doses and energies gamma-radiation. On the base of silicon compensated by lithium non-cooling detectors of gamma-radiation with energy resolution 30 keV were developed. Product Description popup.authors popup.nrat_date 2020-04-02 Close