Search academic texts

Information × Registration Number 0201U003323, 0198U002608 , R & D reports Title Research of the hydrogen atom influence on subsurface layers of semiconductor crystals and heterostructures. popup.stage_title Head Shapovalov Vitalij Pavlovych, Registration Date 15-02-2001 Organization Zaporizhzhie State Technical University popup.description2 It has been observed physical mechanisms of hydrogen-defect and hydrogen-impurity interaction which leads to neutralization of impurity electrical activity and impurity diffusion stimulation at room temperatures. Crystals of simple semiconductors (silicon, germanium) and semiconductor structures based on them with p-n junctions and silicon dioxide are objects of the research work. The aim of research - investigation of processes which take plase on surface and subsurface, layers of semiconductors under the influence of hydrogenatoms/ While research standart semiconductors material electrophysical parameter controlling devices and arragements were used. Area of using: electronic industry, devicebuilding. Product Description popup.authors popup.nrat_date 2020-04-02 Close