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Information × Registration Number 0201U004984, 0197U003448 , R & D reports Title Investigation of physical phenomtna in the sensors based on tht multilayer contact structures popup.stage_title Head Kil'chyts'ka Svitlana Sergiyivna, Registration Date 17-05-2001 Organization Taras Shevchenko Kiev University popup.description2 Investigations of metal-silicon structures with thin porous Si layer were performed. The thickness of porous Si has been shown to influence on the current transport mechanism and on surface state spectra. The main features of sensitivity of thin metal-GaAs structures to NH3 and humidity have been established. The use of these structures as sensors was analysed. Dark and photo currents of p-n junction with inserted layers of porous Si were calculated and their influence on the solar cells properties were considered. The impact of selective diffusors on the external quantum yield of solar cells was investigated Product Description popup.authors popup.nrat_date 2020-04-02 Close