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Information × Registration Number 0201U005416, 0101U004256 , R & D reports Title Structure evalution and properties of nanocrystaline inorganic thin films popup.stage_title Head Fekeshgazi Ishtvan Vintsejovych, Registration Date 04-07-2001 Organization Institute of Semiconductor Physics popup.description2 Object of a research - oxide film SiOx and Al2O3 with nanocrystalline of Si, Ge and Al. The purpose of the project - development of production processes of nanocrystalline silicon microstructures in recordings of silicon dioxide and multilayer interference structures on their basis by methods of thermal and electron-beam evaporation, research of shaping of a structure nanocrystalline of silicon microstructures in recordings dioxide of silicon for want of different technological conditions of their manufacturing; and also structural, luminescence and Raman of a research is quantum - dimensional nanocrystalline silicon microstructures with the purpose of improvement of technologies of their manufacturing for use in optoelectronic systems. A method of a research - statistical analysis of technological conditions of deriving nanocrystalline systems, their structural, photoluminescence and Raman performances. By different technological methods are made two - both three-component film and system. Alloye d Ge, Si or Al of a film SiOx are obtained by a simultaneous sedimentation SiOx and Si and Al with a specific velocity, and Ge with a varied velocity of evaporation, and also way impluntation of ions Ge or Si in stratums SiOx. A film of a system Si/Sio2 also are obtained by thermal transformation SiOx. Structural, luminescence and spectroscopic Raman researches such is exemplar have shown, that in all cases the besieged stratums are characterized by a rectangular distribution of impurities of atoms Ge, Si or Al in amorphic dielectric matrixes, which after an annealing for want of temperatures 300-1100 C in vacuum or atmosphere of nitrogen at first are grouped in the chaotically placed clusters, and then - in nanocrystas by sizes 3-10 nm. The modifications, appropriate to them, in Raman spectra of light and in edge of area of an own absorption are revealed. The spectra of photoluminescence are characterized by essential temporarily - temperature dependence with purchase of stabilization for want of high temp eratures of an annealing. However intensity of radiation of systems minor for the recommendation for broad practical application. The outcomes SRW are published in 6 articles and are represented on 2 international conferences. The prognosal supposition concerning development of object of a research - search of optimum production process of oxide recordings with nanocrystalline groupings. Product Description popup.authors popup.nrat_date 2020-04-02 Close