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Information × Registration Number 0201U005576, 0101U000717 , R & D reports Title Complex semiconductor diodes popup.stage_title Head Gorlej Petro Mykolajovych, Registration Date 10-08-2001 Organization Yuri Fedkovych Chernivtsi National University popup.description2 The investigations of obtaining of diode structures on the basis of telluride cadmium and zinc monocrystals, investigation of their electrical and photoelectrical properties, and study of opportunities of practical application are carried out in the paper. Peculiarity of the work is using basis materials with a wide range of specific resistance and doping impurities content as well as producing of different type rectifying structures on their basis, such as surface-barrier diodes (SBD), p-n-homo- and heterojunctions. These factors together with the variation of experimental conditions (bias, temperature, light spectrum and its level, etc.) allowed to distinguish the appropriate mechanism of dark and light current-voltage characteristic (CVC) formation and to study it in details. The investigation show that practically all possible mechanisms of current flowing take place in diodes. Photosensitivity spectrum is determined by the type of diode. The effect of shortwave sensitivity sharp increase in p-n-ju nctions on the base of Cd(1-x)Zn(x)Te<Cl> has been discussed. It is found out that the coefficient of hole impact ionization is 1.5 orders greater than the corresponding parameter for electrons. Laboratory detectors with sensitivity range of 1.5-4 eV and inner application 10^3-10^5 were made on high resistant substrates. Solar cells with efficiency of 13% (300 K, AM2) were produced on the base of SBD. Product Description popup.authors popup.nrat_date 2020-04-02 Close