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Information × Registration Number 0202U006633, 0100U000117 , R & D reports Title Development of new physical principles of diagnostics and modification of characteristics of semiconductor materials, structures and devices popup.stage_title Head SHEINKMAN Moisei Kivovich, Registration Date 25-12-2002 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of investigation - compounds of II-VI (CdS monocrystals, ZnSe/GaAs, ZnTe/GaAs epilayers), III-V and Si (monocrystalline and porous silicon), structures on the basis of silicon. The purpose of investigation - clearing up of the mechanisms of a series of interaction processes of bulk and surface defects in semiconductor materials with an electric field, ultrasonic oscillations, etc, elucidation of the nature of the fluctuation phenomena in submicronic devices, mechanisms of nonequilibrium processes in silicon structures and tensoresistors, establishing of the nature of new tensoresistive effects and use them for development of new devices and methods of quality control and modification of materials and structures. Research techniques - optical, luminescent, photoelectric and electric, SIMS, X-ray spectroscopy, IR- absorption, EPR, AFM. The method of a low-temperature express doping and purification of CdS crystals by Cu and Ag impurities by electromigration is offered. The method of decorated dislocation detection in CdS crystals based on edge luminescence spectrum shape analysis is proposed. The anodization regimes and subsequent treatment of Si wafers were optimized, that enables to receive the samples of porous silicon with quantum yield ~20 %. It is shown that 1/f noise in over-submicronic channel MOS transistors has a surface nature and is caused by the traps in gate oxide. The physical principles of integrated pressure converters with physically integrated transformation of a mechanical stress in output signal frequency change were designed. The technological cycle of bulk Ge1-xSix crystal growth was designed and crystals with 0 < х < 0,3 and 0,9 < х < 1,0 were grown. The propositions concerning development of investigation object - improvement of growth technology of monocrystals and epitaxial layers used for manufacture of different optoelectronic devices; using in sensors. Product Description popup.authors popup.nrat_date 2020-04-03 Close