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Information × Registration Number 0203U000010, 0100U000119 , R & D reports Title Investigation of the microwave radiation effect on formation, decomposition and annealing of impurity-defect complexes in the heterogeneous structures based on III-V compounds popup.stage_title Head Svechnikov S.V, Registration Date 08-01-2003 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The work deals with investigation of the role of thermal and non-thermal factors in transformation of structural and electrophysical parameters of semiconductor materials and structures exposed to microwave radiation of various powers during different times of exposure (dose curves). For spatially nonuniform GaAs tunnel diode structures with d-layer (serving as an example), models for integral and local heating of semiconductor exposed to microwave radiation of various powers during different times of exposure were advanced, calculated and tested experimentally. Interrelation between the structural-phase measurements for materials and heterosystems based on III-V compounds (GaAs, GaP, InP) and their electrophysical parameters was studied, as well as common nature of the mechanisms and processes induced by microwave irradiation of III-V compounds and SiO2-SiC 6H, TiBx-n-SiC 6H, Ta2O5-p-Si, ncSi/c-Si and CdS structures was demonstrated. The performed structural, optical and electrophysical investigationsserved as basis for determination of regularity of the effect of microwave radiation on formation, decomposition and annealing of impurity-defect complexes in the heterogeneous structures based on III-V compounds and some other semiconductors of technical importance. The recommendations concerning use of microwave processing for technological purposes are advanced. Product Description popup.authors popup.nrat_date 2020-04-02 Close