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Information × Registration Number 0203U000011, 0100U000148 , R & D reports Title Physical and physical-technological principles of creation of semiconductor materials and functional elements for sensor electronic systems popup.stage_title Head Venger Evgen Fedorovich, Registration Date 08-01-2003 Organization Institute of Semiconductor Physics popup.description2 Subject of studies were semiconducting materials А4 (Si), А3В5 (GaAs, GaP), А2В6 (CdTe and its triple compounds), thin-film heterostructures with nanometer and submicron layers on their basis, and also chalcogenide layer vitreous semiconductors, and various functional devices of a sensory electronics engineering. The purpose was the study of physical and physicotechnical bases of making of semiconducting materials for sensors and functional devices of systems for a sensory electronics engineering. For reaching the purpose the methods of physical optics, acousto-electronic effects, luminescent spectroscopy, examination of photoelectric and galvanomagnetic phenomena, X-ray diffraction and chemical analysis were used . The carried out theoretical and experimental examinations have allowed to establish influence of the various factors on physical properties of sensory materials, to improve the processes of materials grouth and making of functional devices for systems of a sensory electronics engineering,to develop filing mediums for an optical recording of the information, holography and electron-beam lithography, new types of phototransformers, photodiodes, diode sensor controls of temperature. The obtained results can be used in electronic industry for making a wide class of high-quality sensor controls. Product Description popup.authors popup.nrat_date 2020-04-02 Close