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Information × Registration Number 0203U000015, 0100U000149 , R & D reports Title Complex investigation of formation and evolution of defect structures in technically semiconductor materials (Ge, Si, SiC, A2B6, A3B5 compounds), systems on their base depending on the obtaining conditions and influence of techological factor popup.stage_title Head Machulin Volodymyr Fedorovych, Registration Date 08-01-2003 Organization Institute of Semiconductor Physics popup.description2 Investigating objects - Si, Ge, GaAs single crystals and the thin films systems. The aim of the work - the structural enhancement of this materials and the stoichiometrical deviations of binary crystals using the X-ray diffrakction metods and the microrelief of the devices structures using the power microscopy were investigated. Investigating methods - the measurement of the integral reflectivity for structural and quasiforbidden reflections and the comparison with calculated values by dinamical theory of X-ray scattering by the crystals with homogeneously distributed structural defects on impurity implantation, neutron irradiation of crystals, the interaction of nonstoichiometrical defects with elastic deformation, the defect structure of Si-crystals gravity-free growing, the microrelief evolution during the flash annealing i.e. were studied. The results of the investigations of performed work be deliver to the plant laboratories, which manufactured the semiconductors materials. Product Description popup.authors popup.nrat_date 2020-04-02 Close