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Information × Registration Number 0203U000097, 0198U000730 , R & D reports Title Installation for ion-beam doping popup.stage_title Head Venger Ye. F., Registration Date 15-01-2003 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Pulse laser ion source, high vacuum chamber with a system of sample locking, ion accelerator to energies of 1 - 50 keV have been designed and manufactured. Ion-beam accelerator with ion separation within mass range of 1 - 600 is mounted. Software for the analysis of results of ellipsometric investigations of the fuleren structures is developed. Mass spectra were investigated at sputtering of the fuleren films, powders and solid samples. It has been shown that during the sputtering the high-molecular clusters destroy, and mass spectra contain signals for clusters having a mass < 320 Product Description popup.authors popup.nrat_date 2020-04-02 Close