Звіт по науково-дослідній роботі. Пашковський М.В.; Монастирський Л.С.. Встановлення механізмів впливу водню і кисню на формування фізичних властивостей напівпровідникових та оксидних матеріалів

Registration Number

0203U002094, 0100U004099 , R & D reports

Title

Establishment of influence mechanisms to hydrogen and to oxygen on forming of physical properties of semiconductors and oxygen materials

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Head

Pashkovsky M.V.; Monastyrskii L.S.,

Registration Date

29-01-2003

Organization

Ivan Franko Lviv National University. Faculty of the finance and credit

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Character of oxygen, hydrogen introducing into the silicon crystals and complicated oxides was established. Materials physical properties depends were investigated. Analytical expresions of concentrational diffusion coefficient dependencies were obtained.5635

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2020-04-03