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Information × Registration Number 0203U002452, 0100U005493 , R & D reports Title Physical technology basis for low - dimensional and bulk semiconductor structures with extremal parameters, their electronic properties , photoelectric and optic IR - devices based on them. popup.stage_title Head Rarenko Ilaryi Mykhailovych, Registration Date 13-05-2003 Organization Yuri Fedkovych Chernivtsi National University popup.description2 Physical-technological basics for growth of single crystals and film structures of semiconductor compounds of A2B5, A3B5, A3B6, A2B6 group with 3d-elements and their solid solutions have been worked out. Main electrical parameters of barries structures, formed on narrowgap semiconductors, were calculated. Diodes, photodiodes and optical elements of photorefractive devices and non-selective IR-receivers were created on the base of grown crystals. Product Description popup.authors popup.nrat_date 2020-04-02 Close