Search academic texts

Information × Registration Number 0203U002561, 0101U002448 , R & D reports Title Own atom defects in crystalls and thin films at the А4B6 compounds and their role at the formation materials to the IR-technics devices. popup.stage_title Head Shyjchuk O.V., Registration Date 04-06-2003 Organization Precarpathian university named after Vassyl Stefanyk popup.description2 The influence of vacuum anealing on surface of lead chalkogenies films is explored. The possibility of variation surface lagyer of lead chalkogenides films, placed in empty space is theoretically shows at higher temperature. The spatial-timeallocation of concentrations both of chalkogen and lead in surface layer is explored. The received results of numerical calculations respond experimental data on annealing in vacuo of lead chalkogendes films. The features of the kinetic phenomena in crystals n-type conduction of lead chalkogenides at the different defect stutus were explored. The dependence of Hall mobillity from carriers concentration at the temperatures 4,2-300 K. Calculations were carried out on the basis of the guadratic and nonguadratic laws of a dispersion with removable effective mass, using Kane model for crystals n-tyre of conduction. On the basis of comparison with experimental data the prevailing mechanisms of dispersion are analysed, the boundaries of use of the guadratic and nonguadratic lawsf a disperion on Kane model in viewed concentration and temperation and temperature intervals are improved. The character of change of prevailing mechanisms of a dispelling is analysed at transition from one expiored crystal to another with change of chalkogen atom Product Description popup.authors popup.nrat_date 2020-04-02 Close