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Information × Registration Number 0203U002659, 0103U002122 , R & D reports Title X-ray investigations of deformation state and chemical content of laser layers structures InGaAsN/GaAs popup.stage_title Head Molodkin Vadim Borysovych, Registration Date 18-12-2003 Organization Institute for metal physics NAS Ukkraine popup.description2 Multilayer systems containing layers of quantum wells (QWs) of InxGa1-xAs1-yNy type have been investigated by using high-resolution double-crystal X-ray diffractometry and dynamical diffraction theory. From the analysis of rocking curves, the nitrogen contents in QW layer and buffer layers before and after annealing has been determined. It has been shown that the significant intermixing of In and Ga atoms at the interfaces occurs yet during the growth of QW layer. In consequence of the interdiffusion of In atoms into barrier GaAs layer and Ga atoms into the QW, the layer interface is smeared nearly up to the depths 1,2 nm. It has been established that at small nitrogen contents in QW (N<3%) and in buffer layers (N<1%), the multilayered systems have sufficiently perfect crystalline structure. At the same time, the multilayered systems with strain-compensated GaAs layers are more perfect. Product Description popup.authors popup.nrat_date 2020-04-02 Close