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Information × Registration Number 0203U008092, 0100U003337 , R & D reports Title Contact phenomena in structures on the basis of A3B5 semiconductors composite connections popup.stage_title Head Arkysha U., Registration Date 22-04-2003 Organization Kharkov National University named after V.N.Karazin popup.description2 Object of research : TED's with two active regions and metal cathode - m-n: InP(1-x)As(x)-n:In(0,4)Ga(0,6)As. TED's with linearly variband m-n: In(x)Ga(1-x)As alloy in active region. The purpose of work: study of the basic physical processes, reception current-voltage, power and frequency of the characteristics of TED's. Method of research: Mathematical modeling of work of the TED's on the basis of two-temperature model. The basic results: Dipole domains are transited only in n:In(0,4)Ga(0,6)As of region in the diode with antiblocking m-n by contact. In the diode with blocking m-n by contact, depending on the enclosed field and lengt of region, it is possible transiting dipole of domains only in m-n: InP(1-x)As(x) or in n:In(0,4)Ga(0,6)As and simultaneously in two regions. Interaction of domains in two regions results in increase of output power and efficiency of diodes. It is shown, that at use of such TED's on frequency - 42 GHz the stream of output flow power is - 40 kW/cm2 at efficiency - 20%. The two-temperature model of transfer electron effect in variband TED's is developed. Work of the varibamd TED's dependence relaxation frequency of the electrons concentration in Г- valley on coordinate is determined. Dipole domains are transited only then when the named frequency decreases from the cathode to the anode in the diode with ohmic n+ - n cathode to the anode. The minimal critical length of active regions is - 0,6 mm. Product Description popup.authors popup.nrat_date 2020-04-02 Close